Extraction of temperature dependences of small-signal model parameters in SiGe HBT HICUM model

Sun Ya-Bin¹, Fu Jun^{2, †,}, Wang Yu-Dong², Zhou Wei², Zhang Wei², Liu Zhi-Hong²

Comparison between the measured (symbols) and fitting results (solid lines) of formulas (1)–(3) for 1 × 0.2 × 16 μm² SiGe HBT biased at V_B = V_C = 0 V at room temperature.