Numerical simulation of the magnetoresistance effect controlled by electric field in p

Numerical simulation of the magnetoresistance effect controlled by electric field in p–n junction

Yang Pan, Chen Wen-Jie, Wang Jiao, Yan Zhao-Wen, Qiao Jian-Li, Xiao Tong, Wang Xin, Pang Zheng-Peng, Yang Jian-Hong^†,

Variations of MR₁ with magnetic field for various gate voltages at a bias voltage of 0.9 V.