Numerical simulation of the magnetoresistance effect controlled by electric field in p–n junction
Yang Pan
, Chen Wen-Jie
, Wang Jiao
, Yan Zhao-Wen
, Qiao Jian-Li
, Xiao Tong
, Wang Xin
, Pang Zheng-Peng
, Yang Jian-Hong
†,
Variation of resistance ratio with gate voltage at
B
= 0 T and
V
bias
= 0.9 V.