Numerical simulation of the magnetoresistance effect controlled by electric field in p–n junction
Yang Pan, Chen Wen-Jie, Wang Jiao, Yan Zhao-Wen, Qiao Jian-Li, Xiao Tong, Wang Xin, Pang Zheng-Peng, Yang Jian-Hong†,
       

Net charge concentrations for various magnetic fields at Vbias = 0.9 V, y = 2.5 μm (a) and 0.3 μm (b).