Numerical simulation of the magnetoresistance effect controlled by electric field in p–n junction
Yang Pan, Chen Wen-Jie, Wang Jiao, Yan Zhao-Wen, Qiao Jian-Li, Xiao Tong, Wang Xin, Pang Zheng-Peng, Yang Jian-Hong†,
       

Schematic diagram of the p–n junction device, where the length L is 10 μm and width W is 5 μm.