Numerical simulation of the magnetoresistance effect controlled by electric field in p–n junction
Yang Pan
, Chen Wen-Jie
, Wang Jiao
, Yan Zhao-Wen
, Qiao Jian-Li
, Xiao Tong
, Wang Xin
, Pang Zheng-Peng
, Yang Jian-Hong
†,
Schematic diagram of the p–n junction device, where the length
L
is 10 μm and width
W
is 5 μm.