An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

Liu Fan-Yu^{1, †,}, Liu Heng-Zhu¹, Liu Bi-Wei¹, Guo Yu-Feng²

Potential profiles in partially-depleted region along x = 0 (see Fig. 1) for variable front gate voltage. (a) W_fin = 100 nm and (b) W_fin = 9 nm. N_D = 10¹⁹ cm⁻³, T_si = 9 nm, V_D = 0.05 V, and V_BG = 0 V.