An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

Liu Fan-Yu^{1, †,}, Liu Heng-Zhu¹, Liu Bi-Wei¹, Guo Yu-Feng²

Effects of back gate on narrow and tall JL SOI FinFET for (a) I_D(V_FG) and (b) g_m(V_FG). The coupling effect in narrow and tall JLSOI FimFEL has a small effect. N_D = 10¹⁹ cm⁻³, V_D = 0.05 V, and V_BG = 0 V.