An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

Liu Fan-Yu^{1, †,}, Liu Heng-Zhu¹, Liu Bi-Wei¹, Guo Yu-Feng²

Effects of back gate on the drain currents for (a) wide and (b) narrow JL SOI FinFETs. N_D = 10¹⁹ cm⁻³, T_si = 9 nm, and V_D = 0.05 V.