An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

Liu Fan-Yu^{1, †,}, Liu Heng-Zhu¹, Liu Bi-Wei¹, Guo Yu-Feng²

(a) Simulated drain currents and (b) transconductance versus front gate voltage for wide JL SOI FinFETs. N_D = 10¹⁹ cm⁻³, T_si = 9 nm, V_D = 0.05 V, and V_BG = 0 V.