An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupling effect

Liu Fan-Yu^{1, †,}, Liu Heng-Zhu¹, Liu Bi-Wei¹, Guo Yu-Feng²

(a) Plots of simulated dg_m/dV_FG versus V_FG for a planar Si JL transistor and a wide JL SOI FinFET (W_fin = 100 nm); (b) plots of simulated dg_m/dV_FG versus V_FG for two nano-channel junctionless SOI FinFETs (W_fin = 9 nm and 7 nm). T_si = 9 nm, L_G = 200 nm, and N_D = 10¹⁹ cm⁻³.