Study on electrical defects level in single layer two-dimensional Ta2O5
Li Dahai1, Song Xiongfei2, Hu Linfeng3, Wang Ziyi1, Zhang Rongjun1, †, , Chen Liangyao1, Zhang David Wei2, Zhou Peng2, ‡,
       

XPS acquired on single layer Ta2O5 for samples dipped for 20 minutes, including (a) Ta 4f and (b) O 1s of as-grown sample and (c) Ta 4f and (d) O 1s of annealed sample, respectively. The black circles are experimental XPS data; other colors are fitted curves.