Study on electrical defects level in single layer two-dimensional Ta<sub>2</sub>O<sub>5</sub>

Study on electrical defects level in single layer two-dimensional Ta₂O₅

Li Dahai¹, Song Xiongfei², Hu Linfeng³, Wang Ziyi¹, Zhang Rongjun^{1, †,}, Chen Liangyao¹, Zhang David Wei², Zhou Peng^{2, ‡,}

AFM images of Ta₂O₅ nanosheets deposited on SiO₂/Si substrates. The top is the surface morphologies of different samples: (a) dipped in a colloidal suspension of Ta₂O₅ nanosheets for 2 minutes and dipped for 20 minutes for (b) sample 1, (c) sample 2, and (d) sample 3. The bottom is the height profile of marked lines in panels (a), (b), (c), and (d), respectively.