Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H

Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power SBDs

Song Qing-Wen^{1, 2, †,}, Tang Xiao-Yan^{2, ‡,}, Yuan Hao², Wang Yue-Hu², Zhang Yi-Meng², Guo Hui², Jia Ren-Xu², Lv Hong-Liang², Zhang Yi-Men², Zhang Yu-Ming²

Reverse leakage current density characteristics (J_R–V) of the fabricated 4H–SiC SBDs based on epitaxial layers with different thickness values.