Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power SBDs
Song Qing-Wen
1, 2, †,
, Tang Xiao-Yan
2, ‡,
, Yuan Hao
2
, Wang Yue-Hu
2
, Zhang Yi-Meng
2
, Guo Hui
2
, Jia Ren-Xu
2
, Lv Hong-Liang
2
, Zhang Yi-Men
2
, Zhang Yu-Ming
2
Relationships between differential on-resistance and epilayer doping concentration.