Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H–SiC power SBDs
Song Qing-Wen1, 2, †, 
, Tang Xiao-Yan2, ‡, , Yuan Hao2, Wang Yue-Hu2, Zhang Yi-Meng2, Guo Hui2, Jia Ren-Xu2, Lv Hong-Liang2, Zhang Yi-Men2, Zhang Yu-Ming2
, Tang Xiao-Yan2, ‡, , Yuan Hao2, Wang Yue-Hu2, Zhang Yi-Meng2, Guo Hui2, Jia Ren-Xu2, Lv Hong-Liang2, Zhang Yi-Men2, Zhang Yu-Ming2 Forward current density–voltage characteristics of SiC SBDs fabricated with wafers No. 1–No. 3 having different epitaxial thickness values (10 μm, 30 μm, and 50 μm).
