Preparation and room temperature NO2-sensing performances of porous silicon/V2O5 nanorods
Yan Wen-Jun, Hu Ming, Liang Ji-Ran, Wang Deng-Feng, Wei Yu-Long, Qin Yu-Xiang†, 
SEM images of (a) the as-deposited V film with 300 nm in thickness on the PS surface, and annealed samples for 30 min at (b) 400 °C, (c) 500 °C, and (d) 600 °C respectively.
