Mobility enhancement of strained GaSb p-channel metal–oxide–semiconductor field-effect transistors with biaxial compressive strain

Chen Yan-Wen^{1, †,}, Tan Zhen^{2, †,}, Zhao Lian-Feng^{2, 3}, Wang Jing², Liu Yi-Zhou¹, Si Chen⁴, Yuan Fang², Duan Wen-Hui¹, Xu Jun^{2, ‡,}

The I_d–V_g characteristics of various biaxial compressive strained GaSb p-channel MOSFETs with V_d at (a) −1 V and (b) −0.05 V. (c) The I_d–V_d characteristics of 2.0% biaxial compressive strained GaSb p-channel MOSFETs with different gate voltages range from 1.5 V to −4 V. (d) Hole mobility enhancement characteristics.