Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

Li Liuan¹, Zhang Jiaqi², Liu Yang^{1, †,}, Ao Jin-Ping^{2, ‡,}

The current–voltage (a) and transfer (b) characteristics of HFETs and MOS-HFETs.