Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature

Li Liuan¹, Zhang Jiaqi², Liu Yang^{1, †,}, Ao Jin-Ping^{2, ‡,}

The capacitance–voltage (a) and current–voltage (b) characteristics of MOS-HFETs.