Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with low ohmic annealing temperature
Li Liuan1, Zhang Jiaqi2, Liu Yang1, †, 
, Ao Jin-Ping2, ‡,
, Ao Jin-Ping2, ‡, The current–voltage (a) and TLM characteristics (b) of the ohmic contact.
