Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors
Zhao Yan-Xiao
, Zhang Wan-Rong
†,
, Xin Huang
, Xie Hong-Yun
, Jin Dong-Yue
, Fu Qiang
L
s
versus 1/
W
E
at
J
C
= 0.05 mA/μm
2
.