Effect of lateral structure parameters of SiGe HBTs on synthesized active inductors
Zhao Yan-Xiao, Zhang Wan-Rong†, 
, Xin Huang, Xie Hong-Yun, Jin Dong-Yue, Fu Qiang
, Xin Huang, Xie Hong-Yun, Jin Dong-Yue, Fu Qiang A typical SiGe HBT active inductor.
