Control of symmetric properties of metamorphic In<sub>0.27</sub>Ga<sub>0.73</sub>As layers by substrate misorientation

Control of symmetric properties of metamorphic In_0.27Ga_0.73As layers by substrate misorientation

Yu Shu-Zhen¹, Dong Jian-Rong^{1, †,}, Sun Yu-Run¹, Li Kui-Long^{1, 2}, Zeng Xu-Lu^{1, 2}, Zhao Yong-Ming¹, Yang Hui¹

XTEM images of the In_0.27Ga_0.73As layers grown on (a) 2° and (b) 7° offcut GaAs substrates.