Control of symmetric properties of metamorphic In<sub>0.27</sub>Ga<sub>0.73</sub>As layers by substrate misorientation

Control of symmetric properties of metamorphic In_0.27Ga_0.73As layers by substrate misorientation

Yu Shu-Zhen¹, Dong Jian-Rong^{1, †,}, Sun Yu-Run¹, Li Kui-Long^{1, 2}, Zeng Xu-Lu^{1, 2}, Zhao Yong-Ming¹, Yang Hui¹

Symmetric (004) RSMs of the 7°-off sample obtained using an incident x-ray beam along (a) [110] and (b) [1-10] directions. Asymmetric (-2-24) RSMs of the 7°-off sample obtained using an incident x-ray beam along (c) [110] and (d) [1-10] directions.