Fractional-dimensional approach for excitons in GaAs films on Al<sub><italic>x</italic></sub>Ga<sub>1−<italic>x</italic></sub>As substrates

Fractional-dimensional approach for excitons in GaAs films on Al_xGa_1−xAs substrates

Wu Zhen-Hua¹, Chen Lei², Tian Qiang^{3, †,}

The binding energy for the heavy-hole and light-hole excitons in the GaAs film on Al_0.3Ga_0.7As substrate as a function of the film thickness at the substrate thickness L_s = 20 Å.