Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl4 and TMA precursors
Xiang Jinjuan1, Ding Yuqiang2, Du Liyong2, Li Junfeng1, Wang Wenwu1, Zhao Chao1, †, 
The FTIR spectra of the as-deposited films grown at 200 °C, 300 °C, and 400 °C.
