Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl<sub>4</sub> and TMA precursors

Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl₄ and TMA precursors

Xiang Jinjuan¹, Ding Yuqiang², Du Liyong², Li Junfeng¹, Wang Wenwu¹, Zhao Chao^{1, †,}

The surface roughness pictures of the as-deposited films grown at (a) 200 °C, (b) 300 °C, and (c) 400 °C.