Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl<sub>4</sub> and TMA precursors

Growth mechanism of atomic-layer-deposited TiAlC metal gate based on TiCl₄ and TMA precursors

Xiang Jinjuan¹, Ding Yuqiang², Du Liyong², Li Junfeng¹, Wang Wenwu¹, Zhao Chao^{1, †,}

XPS spectra of (a) C 1s, (b) O 1s, (c) Ti 2p, and (d) Al 2p of the as-deposited films grown at different temperatures.