Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors
Song Qing-Wen1, 2, †, 
, Tang Xiao-Yan2, ‡, , He Yan-Jing2, Tang Guan-Nan2, Wang Yue-Hu2, Zhang Yi-Meng2, Guo Hui2, Jia Ren-Xu2, Lv Hong-Liang2, Zhang Yi-Men2, Zhang Yu-Ming2
, Tang Xiao-Yan2, ‡, , He Yan-Jing2, Tang Guan-Nan2, Wang Yue-Hu2, Zhang Yi-Meng2, Guo Hui2, Jia Ren-Xu2, Lv Hong-Liang2, Zhang Yi-Men2, Zhang Yu-Ming2 (a) Transfer characteristics of the fabricated devices measured at a drain voltage of 100 mV and (b) the corresponding transconductance characteristics.
