Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide

Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors

Song Qing-Wen^{1, 2, †,}, Tang Xiao-Yan^{2, ‡,}, He Yan-Jing², Tang Guan-Nan², Wang Yue-Hu², Zhang Yi-Meng², Guo Hui², Jia Ren-Xu², Lv Hong-Liang², Zhang Yi-Men², Zhang Yu-Ming²

Typical output characteristics of the lateral enhancement mode N-channel MOSFET with gate voltage (V_g) from 0 V to 24 V and the drain–source voltage (V_DS) from 0 V to 15 V.