Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors
Song Qing-Wen
1, 2, †,
, Tang Xiao-Yan
2, ‡,
, He Yan-Jing
2
, Tang Guan-Nan
2
, Wang Yue-Hu
2
, Zhang Yi-Meng
2
, Guo Hui
2
, Jia Ren-Xu
2
, Lv Hong-Liang
2
, Zhang Yi-Men
2
, Zhang Yu-Ming
2
Typical current versus electric field (
I
–E) of fabricated N-type 4H–SiC MOS structure.