Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology
Huang Pengcheng1, Chen Shuming1, 2, †, , Chen Jianjun1
       

With ion striking at the gate center of N0 or N2 (shown in Fig. 1) with ion LET of 20 MeV·cm2/mg, the drain and source current transient (a) in conventional layout, (b) in conventional stacking layout, and (c) in in-line stacking layout.