Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology
Huang Pengcheng1, Chen Shuming1, 2, †, 
, Chen Jianjun1
, Chen Jianjun1 With ion striking at the gate center of P2 with ion LET of 20 MeV·cm2/mg, 1D electrostatic potential variation with time for P1 and P2 (a) in conventional stacking layout, (b) in in-line stacking layout. The cut-point is at the depth of 10 nm, and the gate center of P2 and P1.
