Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

Huang Pengcheng¹, Chen Shuming^{1, 2, †,}, Chen Jianjun¹

With ion striking at 10 ps. (a) 2D electrostatic potential variation with time for off-state PMOS (P0 in Fig. 1), the cut-line is at the gate center, (b) 1D electrostatic potential variation with time, the cut-line is at the depth of 10 nm.