Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

Huang Pengcheng¹, Chen Shuming^{1, 2, †,}, Chen Jianjun¹

P-hit SET with ion strike at gate center of off-state PMOS (P0 or P2 in Fig. 1) with the LET of 20 MeV·cm²/mg. The ion strike is at 10 ps (unless otherwise specified, the same as that in other figures).