Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology
Huang Pengcheng1, Chen Shuming1, 2, †, 
, Chen Jianjun1
, Chen Jianjun1 Simulated structure for 40-nm FD-SOI PMOS in an inverter. (a) P-hit simulation, (b) N-hit simulation.
