Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology
Huang Pengcheng1, Chen Shuming1, 2, †, 
, Chen Jianjun1
, Chen Jianjun1 (a) NAND2 gate and its conventional layout as well as the corresponding IS layout, (b) AND2 gate and its conventional layout as well as the corresponding IS layout.
