Performance improvement of AlGaN-based deep ultraviolet light-emitting diodes with double electron blocking layers
Zhang Cheng, Hui-Qing Sun†, 
, Li Xu-Na, Sun Hao, Fan Xuan-Cong, Zhang Zhu-Ding, Guo Zhi-You
, Li Xu-Na, Sun Hao, Fan Xuan-Cong, Zhang Zhu-Ding, Guo Zhi-You Simulated carrier current densities of the two structures at 120 mA.
