Realization of a flux-driven memtranstor at room temperature
Shen Shi-Peng, Shang Da-Shan†, , Chai Yi-Sheng, Sun Young‡,
       

(a) The MH hysteresis loop of BSCFAO at 300 K. The inset shows an expended view of the magnetization in the low-field region. (b) Magnetoelectric current at 300 K. The inset plots the scheme of the device and the measurement configuration. (c) Electric polarization as a function of magnetic field showing a butterfly-shaped hysteresis loop. (d) The corresponding Δq–Δφ relationship of the device.