Improvement in electrical properties of high-κ film on Ge substrate by an improved stress relieved pre-oxide method
Fan Ji-Bin1, 2, †, , Ding Xiao-Fu1, Liu Hong-Xia2, Xie Peng-Fei1, Zhang Yuan-Tao1, Liao Qing-Liang1
       

IV curves of different pre-treated HfO2/Ge structures.