Improvement in electrical properties of high-<italic>κ</italic> film on Ge substrate by an improved stress relieved pre-oxide method

Improvement in electrical properties of high-κ film on Ge substrate by an improved stress relieved pre-oxide method

Fan Ji-Bin^{1, 2, †,}, Ding Xiao-Fu¹, Liu Hong-Xia², Xie Peng-Fei¹, Zhang Yuan-Tao¹, Liao Qing-Liang¹

C–V curves of different pre-treated HfO₂/Ge structures (f = 100 kHz).