Improvement in electrical properties of high-
κ
film on Ge substrate by an improved stress relieved pre-oxide method
Fan Ji-Bin
1, 2, †,
, Ding Xiao-Fu
1
, Liu Hong-Xia
2
, Xie Peng-Fei
1
, Zhang Yuan-Tao
1
, Liao Qing-Liang
1
AFM surface images of sample A and sample B before and after annealing.