Improvement in electrical properties of high-<italic>κ</italic> film on Ge substrate by an improved stress relieved pre-oxide method

Improvement in electrical properties of high-κ film on Ge substrate by an improved stress relieved pre-oxide method

Fan Ji-Bin^{1, 2, †,}, Ding Xiao-Fu¹, Liu Hong-Xia², Xie Peng-Fei¹, Zhang Yuan-Tao¹, Liao Qing-Liang¹

The XPS core-level spectra of the Ge_3d for HfO₂ deposited on the Ge substrate (sample A) and Ge substrate after an improved SRPO treatment (sample B). Curve fitting is used to ensure high accuracy binding energy of the peak.