Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor
Jiang Zhi†, 
, Zhuang Yi-Qi, Li Cong, Wang Ping, Liu Yu-Qi
, Zhuang Yi-Qi, Li Cong, Wang Ping, Liu Yu-Qi Gate leakage characteristics for different values of the drain voltage. The inset shows the image force can reduce the leakage floor by two orders of magnitude.
