Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor
Jiang Zhi†, , Zhuang Yi-Qi, Li Cong, Wang Ping, Liu Yu-Qi
       

IDS–VDS characteristics for the DG-nTFET at VGS = 0.2 V, 0.4 V, and 0.6 V in the cases with and without scattering. Source/channel interface scattering (AP) and electron mobility scattering (RP) are considered independently. These elastic scatterings would reduce BTBT rate and the mobility.