Influences of the trap energy level on the TAT current through gate/channel interface trap. (a) The TAT current increases with increasing proximity of the trap level to the source valence band. (b) Off-state and TAT current increase with increasing the scattering phonon energy. (c) The TAT current is lowest when trap level is far away from the valence band with BTBT and TAT. (d) Energy-position of one-dimensional DG-nTFET with phonon-assisted scattering. It can be clearly seen that phonon absorption assisted transport occurs at the gate/channel interface.