Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal–oxide–semiconductor field-effect transistor with low on-state resistance
Wang Yu-Ru1, Liu Yi-He1, Lin Zhao-Jiang1, Fang Dong1, Li Cheng-Zhou1, Qiao Ming1, 2, †, , Zhang Bo1
       

(a) Numerical vertical doping concentrations and (b) corresponding current density distributions in the drift region at x = 25 μm for the novel and conventional triple RESURF SOI LDMOS.