Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co<sub>2</sub>MnSi/graphene/n-Ge junction

Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co₂MnSi/graphene/n-Ge junction

Li Gui-fang^†,, Hu Jing, Lv Hui, Cui Zhijun, Hou Xiaowei, Liu Shibin, Du Yongqian

(a) Richardson plots of Co₂MnSi/single-graphene (t = 1)/Ge (001) junction for V = 0.15 V–0.25 V. (b) Plot of a = −(q/k)(ϕ_b – V/n) versus V for Co₂MnSi/single-graphene (t = 1)/Ge (001) junction.