Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co<sub>2</sub>MnSi/graphene/n-Ge junction

Effect of graphene tunnel barrier on Schottky barrier height of Heusler alloy Co₂MnSi/graphene/n-Ge junction

Li Gui-fang^†,, Hu Jing, Lv Hui, Cui Zhijun, Hou Xiaowei, Liu Shibin, Du Yongqian

(a) Schematic diagram of device structure and three-terminal circuit geometry for measurement of I–V characteristics. (b) Typical J–V characteristics of Co₂MnSi/graphene/Ge (001) heterostructures with different numbers of graphene layers at RT.