Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

Luo Jun¹, Zhao Sheng-Lei¹, Mi Min-Han¹, Chen Wei-Wei², Hou Bin², Zhang Jin-Cheng¹, Ma Xiao-Hua^{1, 2}, Hao Yue^{1, †,}

Off-state logarithmic electron concentration distributions of the AlGaN/GaN HEMTs respectively with (a) L_G = 1 μm, V_DS = 0 V; (b) L_G = 1 μm, V_DS = 100 V; (d) L_G = 3 μm, V_DS = 0 V; (e) L_G = 3 μm, V_DS = 100 V. Electric field distributions of the AlGaN/GaN HEMTs respectively with (c) L_G = 1 μm, V_DS = 100 V; (f) L_G = 3 μm, V_DS = 100 V. All the devices are biased at V_GS = −6 V and simulated by Silvaco-ATLAS software.